====== 2N2222 ======
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===== CHARACTERISTICS =====

  * NPN transistor (single P doped layer embedded between two N doped layers)
  * Bipolar junction transistor (BJT)
  * Current controlled transistor
  * Collector current : 800 mA
  * Power Dissipation : 500mW
  * Operation T° -65°C to 200°C
  * Collector base voltage : 60 VDC
  * Collector Emitter Voltage : 30 VDC
  * Emitter Base voltage : 5 VDC