2N2222

NPN transistor (single P doped layer embedded between two N doped layers)

Bipolar junction transistor (BJT)

Current controlled transistor

Collector current : 800 mA

Power Dissipation : 500mW

Operation T° -65°C to 200°C

Collector base voltage : 60 VDC

Collector Emitter Voltage : 30 VDC

Emitter Base voltage : 5 VDC